Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Damage analysis of benzene induced by keV fullerene bombardment

0168-583X/$ see front matter 2009 Elsevier B.V. doi:10.1016/j.nimb.2009.01.058 * Corresponding author. Fax: +48 12 633 7086. E-mail address: [email protected] (B Molecular dynamics computer simulations have been used to investigate the damage of a benzene crystal induced by 5 keV C20, C60, C120 and C180 fullerene bombardment. The sputtering yield, the mass distributions, and the d...

Multiscale physics of ion-induced radiation damage.

This is a review of a multiscale approach to the physics of ion-beam cancer therapy, an approach suggested in order to understand the interplay of a large number of phenomena involved in the radiation damage scenario occurring on a range of temporal, spatial, and energy scales. We describe different effects that take place on different scales and play major roles in the scenario of interaction ...

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

Radiation Damage of Electronic and Optoelectronic Devices in Space

The effects of radiation damage on modern electronic and optoelectronic is discussed. Ionization damage causes degradation in transistors and integrated circuits, and there are new effects -including enhanced damage at low dose rate -that have to be considered when devices are tested and qualified for space use. For optoelectronic devices displacement damage is usually the main concern. Some ty...

Impacts of plasma process-induced damage on MOSFET parameter variability and reliability

Article history: Received 25 June 2015 Received in revised form 30 June 2015 Accepted 1 July 2015 Available online xxxx